Abstract
The issues involved in high-resolution pattern fabrication with high aspect ratio by means of conventional electron beam lithography (EBL), in a thick single-level resist have been investigated. A commercial EBL machine which operates at medium accelerating voltage was used to expose 1 μm thick single-level PMMA resist on bulk and thin substrates. Monte Carlo simulation was used extensively in this study for better understanding of electron scattering behavior in order to quantify the achievable ultimate resolution and experimental latitudes in a thick single-level resist on bulk silicon and thin substrate by means of conventional EBL techniques. Our experimental and theoretical (Monte Carlo simulation) studies based on the effects of various process variables, including the effect of beam voltage and exposure dosage (for latitude-related experiments), show that closely spaced lines with dimensions down to 0.12μm can be fabricated in a thick single-level resist, even on bulk silicon at 40 kV accelerating voltage. Finally, issues concerning resist profile angle, varying beam voltage and structure dimensions for exposure on bulk silicon are discussed.
Published Version
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