Abstract
High aspect ratio structures with dimension down to 0.12 μm are fabricated in thick single layer resist by means of a conventional Electron Beam Lithography(EBL) machine operating at medium accelerating voltage. Experimental and theoretical studies (Monte Carlo simulation) of the process variables, including the effect of beam voltage and exposure dosage (latitude experiment), showed that closely spaced 0.12 μm structures are possible in 1 μm thick resist even on bulk silicon at 40 KV. A systematic analysis of resist profiles (undercut angle) with varying writing dosage and accelerating voltage is also reported.
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