Abstract
This paper presents electromagnetic modeling of Non-uniform serpentine flexure based RF-MEMS switch. The Radio Frequency (RF) performance of the RF MEMS switch is obtained by scattering parameters (Insertion loss, Return loss and Isolation) which are mainly dominated by down state to upstate capacitance ratio and MEMS bridge geometries. This RF MEMS switch results in low insertion loss of -0dB to -0.3dB with considerable isolation of more than -40dB at 10-50 GHz in unactuated and actuated states of MEMS bridge.
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