Abstract
Polycrystalline tungsten disulfide (WS 2) thin films are electrodeposited on conducting glass plates in galvanostatic route. The deposited films are characterised structurally by taking X-ray diffraction, and the phase is confirmed as 2H-hexagonal and the preferential orientation is along (0 0 4) plane. The electrodeposited films are of type-II with the Van der Waals face parallel to the substrate. The lattice constants are calculated and reported. The band gap of the material is found from the absorption spectrum and the surface morphology is analysed by scanning electron microscope. The nature of the film is found as p-type from the negative slope of the Mott–Schottky plot and the semiconductor parameters like flatband potential and acceptor density are calculated. The photoelectrochemical solar cell behavior of p-WS 2 film is studied and its output characteristics are presented.
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