Abstract
The all-inorganic halide perovskite CsPbBr3 possesses excellent optoelectronic characteristics and has a high opportunity for application in a variety of photoelectric devices. CsPbBr3 is known for its relatively low ionic migration and higher resistivity compared to other perovskite compositions. In addition, the performance in X-ray detectors can be further improved by the addition of I- dopants. The addition of I- dopants has been shown to be an effective way to improve these properties. The vertical Bridgman method was used to grown I--doped CsPbBr3 crystals. The crystal structure, optical characteristics, electrical characteristics, and X-ray detection capabilities oIn addition, an efficient photon recycling, that is, a repeated photon emission and absorption inside the crystal, has been recently observed in both halide perovskite single crystals and thin filmsf CsPbBr3-xIx (0 ≤ x < 1) single crystals were all systematically investigated. The results indicate that I--doping can adjust the band gap, increase the resistivity and carrier mobility, and reduce the trap density and dark current, providing the possible application of halide perovskite in various optoelectronic devices.
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