Abstract

This research aims to grow a thin film Sn(Se0.2S0.8) by evaporation method. The researcher can understand the effect of spacer variations towards the crystal structure, lattice parameter, surface morphology, and chemical composition of Sn(Se0,2S0,8) thin film. The process of Sn(Se0.2S0.8) thin film preparation was done by using the evaporation method with pressure about 2 x 10-5 mbar. The process of Sn(Se0.2S0.8) thin film deposition was performed by giving some space between the substrate and the source i.e. 25 cm, 15 cm, and 10 cm. Characterization process was performed by using X-ray Diffraction (XRD) to determine the structure and parameter of thin film, Scanning Electron Microscopy (SEM) to determine the thin film of surface morphology, and Energy Dispersive Analysis X-Ray (EDAX) to determine the chemical composition of the thin film. The result of XRD characterization show that the Sn(Se0.2S0.8) thin film was polycrystalline and it has an orthorombic crystal structure, with the lattice parameter were sample 1 (spacer 25 cm): a = 4.306 Å, b = 11.30 Å, c = 4.139 Å; sample 2 (spacer 15 cm): a = 4.286 Å, b = 11.18 Å, c = 4.123 Å; sample 3 (spacer 10 cm): a = 4.301 Å, b = 11.30 Å, c = 4.143 Å. The result of SEM characterization in the sample 2 of Sn(Se0.2S0.8) showed that the surface morphology of the sample consisted of homogeneous oval shaped grains, with the diameter size of crystal grains on the surface about 0.3 μm – 0.5 μm. The result of EDAX analysis showed that comparison of percentage of chemical composition thin film Sn(Se0.2S0.8) was 1 : 0.11 : 0.79. Keywords: evaporation method, semiconductor Sn(Se0.2S0.8), solar cell, material characteristics

Highlights

  • This research aims to grow a thin film Sn(Se0.2S0.8) by evaporation method

  • The researcher can understand the effect of spacer variations towards the crystal structure

  • The process of Sn(Se0.2S0.8) thin film preparation was done by using the evaporation method with pressure

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Summary

Joko Utomo dan Ariswan*

Penelitian ini bertujuan untuk menumbuhkan lapisan tipis Sn(Se0,2S0,8) dengan metode evaporasi. Peneliti dapat mengetahui pengaruh variasi spacer terhadap struktur, parameter kristal, morfologi permukaan, dan komposisi kimia lapisan tipis Sn(Se0,2S0,8). Proses preparasi lapisan tipis Sn(Se0,2S0,8) dilakukan menggunakan metode evaporasi yang bekerja pada tekanan sekitar 2 x 10-5 mbar. Proses karakterisasi dilakukan menggunakan X-Ray Diffraction (XRD) untuk menentukan struktur dan parameter kisi lapisan tipis, Scanning Electron Microscopy (SEM) untuk menentukan morfologi permukaan lapisan tipis dan Energy Dispersive Analysis X-Ray (EDAX) untuk menentukan komposisi lapisan tipis. Hasil karakterisasi XRD menunjukkan bahwa lapisan tipis Sn(Se0,2S0,8) merupakan polikristal dan memiliki struktur kristal orthorombik dengan nilai parameter kisi sampel 1 (spacer 25 cm): a = 4,306 Å, b = 11,30 Å, c = 4,139 Å; sampel 2 (spacer 15 cm): a = 4,286 Å, b = 11,18 Å, c = 4,123 Å; sampel 3 (spacer 10 cm): a = 4,301 Å, b = 11,30 Å, c = 4,143 Å. Kata kunci: metode evaporasi, semikonduktor Sn(Se0,2S0,8), sel surya, karakteristik bahan

Metode Penelitian
Hasil dan Pembahasan
Karakterisasi Struktur Kristal dan Parameter Kisi
JCPDS SnS
Secara teori
Ucapan Terima Kasih
Full Text
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