Abstract
Porous Silicon (PS) has found its broad application for optoelectronics devices specially solar cells applications due to its efficient antireflection coating. This material has advantages such as broaden band gap, wide absorption spectrum and high optical transmission range from 700-1000nm. In this paper, the experimental study of electrochemically prepared porous silicon structures is presented. With an increase in etching time, the thickness and refractive index of porous silicon were found to be increased and decreased respectively. The XRD measurement has confirmed the crystallinity nature of porous silicon as that of bulk silicon. A broad peak of red emission has also confirmed by photoluminescence measurement and it has been attributed to SiHx groups which are confirmed by FTIR spectra. Pyramid like surface over the entire surface is confirmed by AFM measurement which is responsible for the reduction of reflection of photons and hence can enhance the conversion efficiency of solar cells.
Highlights
An increasing interest has been shown towards antireflection coating layer made from porous silicon due to its low fabrication cost
In order to reduce the cost of solar panels, there is a need of enhance the conversion efficiency of solar cells so that photons falling onto solar panels can generate electron and hole pairs which can be collected at the two points
The porous silicon layers were characterized and studied to observe as minimum as possible reflection. This low reflection porous silicon layer is useful as antireflection coating of solar cells
Summary
An increasing interest has been shown towards antireflection coating layer made from porous silicon due to its low fabrication cost. The semiconductor materials used for solar cells are sensitive to a part of the solar radiation spectrum In this view, porous silicon is a promising one as it has the capability of a wide absorption bands and high transmission from 700 to 1000nm [2]. Porous silicon layer acts as an antireflection coating while graded layer with varying expanded band gap offer increased absorption in visible spectrum region. Porous silicon is a very promising material due to its excellent properties and compatibility with silicon based microelectronics with reduced fabrication cost. The most important advantages of using porous silicon in solar cells are its textured nature surface which traps light and reduces the reflectance losses, tuning of band gap for optimum sunlight absorption, conversion into direct band gap semiconductor with large quantum efficiency. Porous silicon structures has good mechanical robustness, chemical stability and compatibility with existing silicon technology has a wide area of potential applications such as waveguides, 1D photonic crystals, chemical sensors, biological sensors, photovoltaic devices etc.[4,5,6,7,8,9,10]
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