Abstract
Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.
Highlights
Doping plays a crucial role in determining physical characteristics and their applications of various organic or inorganic materials, especially for semiconductors
We describe the method of the electrical doping process
Though the electrical doping process is not so newer process, the implementation of this process with the help of Density functional theory (DFT)- and non-equilibrium Green’s function (NEGF)-based first-principle approach gives a new twist to this phenomenon
Summary
Doping plays a crucial role in determining physical characteristics and their applications of various organic or inorganic materials, especially for semiconductors. This method has been successfully proved for the semiconductor physics industry. It is observed that an ideal dopant should exhibit an ideal solubility in its host material, and it exhibits a low defect level. Some basic problems are related to this type of conventional doping process, for example, doping bottleneck which powerfully affects the device performance. This type of performance degradation has been observed severely for wide bandgap materials
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