Abstract
First report on electrically doped semiconducting carbon nanotube is presented using Extended Huckel Theory in combination with Non-equilibrium Green’s function formalism. The results show increase in current with the increasing electrical doping concentration. Electrical doping induces high charge concentration at small applied voltages and is far more superior because of its fault free approach overcoming the limitations of conventional doping. Furthermore, the device density of states confirms the sufficient number of peaks in the valence and conduction bands. The obtained results were compared with other theoretical results in the field in the form of a table. The results are very beneficial for the designing of high-performance CNT devices and enhancing their potential applications in the electronics industry.
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