Spin transport properties in DNA & electrically doped iron QD organo-metallic junction

Abstract

The DNA sensor has emerged as strong candidates for next generation ultra low power application due to its self assemble technique. Non-Equilibrium Green’s Function (NEGF) along with Density Functional Theory (DFT) based First Principle approach is used in investigation of spin transport properties along with quantum scattering transmission characteristics of DNA sensor via Iron (Fe) quantum dots (QD) electrodes at room temperature. Electrically doped Fe QD plays an important role in spin transport mechanism. This electrical doping concentration and weak coupling strength between DNA and Fe QD organo-metallic junction effect into the tunneling contact resistance (TCR) along with quantum-ballistic transmission and junction conductivity of parallel and anti-parallel configuration of this analytical model representation. It has been observed that higher current has been achieved for parallel configuration when compare with anti-parallel configuration at same bias voltage. This voltage-current characteristic is significantly modulated due to the electrical doping effect. This spin transport property shows that this system can well perform for anti parallel configuration. High tunnel organo-metallic resistance approximately 99.9% is observed even at 0 V bias voltage. Tunneling Organo Metallic Contact Resistance (TOMCR) remains large at upper bias voltage.