Electrical properties of Pr-doped Bi4Ti3O12 thin films on Si substrate

Abstract

Bi3.15Pr0.85Ti3O12 thin films have been grown on a p-type Si(111) substrate by the method of metalorganic sol decomposition and spin coating. The optimum temperature of crystallization is 680°C. Atomic force microscopy reveals that the films have a dense, smooth surface. The electrical measurements were conducted on a metal–ferroelectric–insulator–semiconductor capacitor. The films exhibit good insulating property at room temperature. The clockwise hysteresis curves observed show that the films have a memory effect. The fixed charge density and the surface state density were also calculated. The results show that the films have promising applications as the ferroelectric field effect transistor memories.