Abstract
Amorphous Si0.60Ge0.40:Hx films containing 1.7, 3.9, 7.1, 12.1, and 17.3 at % H are prepared by magnetron sputtering at different hydrogen partial pressures, and their electrical conductivity is measured from 80 to 350 K. The conductivity of the films exhibits Arrhenius behavior in the range 250–350 K and satisfies the relation log(σT1/2) ∼ T−1/4 between 80 and 250 K. The conductivity data are used to evaluate the electron localization radius, hop distance, and activation energy of hopping conduction at 80 K; the electron mobility at the Fermi level and in the conduction band; and the 300-K activation energy of conduction.
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