Abstract
Amorphous 1-µm thick films of the Ge0.90Si0.1:Hx solid solution (x=1.3, 5.1, 8.7, 14.2, and 23.7 at. %) were grown in a hydrogen atmosphere under various partial hydrogen pressures. The method of plasmachemical deposition with a rate of 0.3–0.5 A/s was employed. Electrical conductivity of the films was measured within a temperature range of 100–420 K. The dark conductivity of the films was measured. The activation energy of hopping at T=100 K, the hop range, the mobility of electrons at the levels ɛF and ɛC, and the activation energy of conductivity were calculated.
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