Abstract
Depth profiles of ion implantation damage resulting from high-energy implantations into InP were measured with an electrochemical capacitance-voltage technique. The evolution of these profiles during annealing at temperatures up to 500 ° C was investigated. The experimental profiles of unannealed implantations were compared with simulation results from the TRIM program to obtain information about the type of defect being measured. The computed vacancy/interstitial concentration profile showed a strong similarity with experimental profiles for 2 MeV Si implants and 800 keV C implants. The simulations are discussed in detail with respect to replacement collisions and antisite formation.
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