Abstract
The formation of n-type layers in semi-insulating, LEC GaAs by MeV Si implantation has been investigated using an electrolytic CV technique. The study has been done as a function of dose and anneal temperature. The carrier concentration profile associated with 2.5 × 10 13/cm 2, MeV Si implant was not greatly affected by varying the anneal temperature from 750°C to 840°C. The percentage of activation was 65% for 2.5 × 10 13 Si/cm 2 and 40% for 5 × 10 13 Si/cm 3. A buried n-layer with a peak carrier concentration at 2.9 μm was formed with 6 MeV Si implantation. The peak carrier concentration obtained with 4.2 × 10 13 Si/cm 2 implants was 30% higher with an 850°C anneal than with a 750°C. The percentage of activation was sensitive to dose, decreasing for a dose greater than 4.2 × 10 13 Si/cm 2. A 3 μm, 2 × 10 16/cm 3 n-type layer has been produced using multiple MeV Si implantation.
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