Determination of ion implantation damage profiles in III-V compounds by means of an electrochemical capacitance-voltage technique

Abstract

Temperature-dependent electrical measurements on light ion bombarded n-type In0.53Ga0.47As established the presence of deep donors. The depth profiles of the net donor concentration of these samples were obtained by the electrochemical capacitance-voltage technique. A simple model was presented to relate these profiles to the ion damage loss mechanism. The capacitance-voltage technique has also been applied to He bombarded n-type InP. Further extensions of this technique are discussed.