Abstract
A comparative study of the temperature dependence of electrical resistivity, carrier concentration and carrier mobility of the Ordered Defect Compounds (ODCs) CuIn 3Se 5, CuIn 3Te 5, and CuIn 5Te 8 with their corresponding normal 1:1:2 phase is reported. Relatively lower carrier concentration and higher activation energy observed in ODCs is explained on the basis that shallow acceptor or donor levels observed in 1:1:2 phase are partially annihilated in these compounds due to attractive interaction between V Cu −1 and In Cu +2 defect pair. In the activation regime, the mobility is explained by taking into account a scattering mechanism of the charge carriers with donor–acceptor defect pairs. The electrical data at lower temperatures is explained with the existing theoretical expression for the nearest neighbor hopping conduction mechanism.
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