Relation between the activation energies (ε1,E1) and the temperature of carrier mobility maximum in semiconductors. A new method for determination ofE1

Abstract

The activation energies E1 and ϵ1 related to the temperature dependence of charge carrier concentration and resistivity of semiconductors are studied. It is shown that E1 and ϵ1 are not equivalent in spite of the fact that they can happen to be equal. The connection of temperature dependence of resistivity and carrier concentration leads to some new conclusions and a new description of the temperature dependence of the carrier Hall mobility. It is shown that mobility has usually to have a maximum in the relevant temperature range. From the obtained expressions the relation between ϵ1, E1, and the mobility maximum temperature is found. The results are discussed and a new method to find E1 values with high accuracy is suggested. The theoretical results are proved by experimental results. These calculations are performed, using literature data, for Si and GaP crystals of both p and n conductivity types. [Russian Text Ignored]