Abstract
We investigated the effects of P + co-implantation, implantation temperature and type of post-implantation anneal on the hole concentration distributions in semi-insulating (100) InP:Fe wafers implanted with 5×10 13 and 5×10 14 cm −2 Zn + ions. At low doses the P + co-implant combined with a capless rapid thermal anneal (RTA) at 900°C for 10 s greatly suppresses Zn dopant indiffusion and results in peak hole concentrations of 3.0×10 18 to 3.5×10 18 cm −3. At high doses the peak hole concentration and general distribution are influenced by the residual implant damage and the stoichiometric imbalance that remains after the post-implantation anneal. Although all high-dose implants exhibited severe carrier redistribution for the parameters studied, significant improvements in the peak hole concentration up to 8.0×10 18 cm −3 were obtained by a combination of P + co-implantation and RTA.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.