Computer simulation of hybrid integrated circuits including combined electrical and thermal effects : Carl R. Zimmer. Electrocomponent Sci. Technol.10, 171 (1983)

doi:10.1016/0026-2714(83)90947-2

Abstract

We investigated the effects of P+ co-implantation, implantation temperature and type of post-implantation anneal on the hole concentration distributions in semi-insulating (100) InP:Fe wafers implanted with 5×1013 and 5×1014 cm−2 Zn+ ions. At low doses the P+ co-implant combined with a capless rapid thermal anneal (RTA) at 900°C for 10 s greatly suppresses Zn dopant indiffusion and results in peak hole concentrations of 3.0×1018 to 3.5×1018 cm−3. At high doses the peak hole concentration and general distribution are influenced by the residual implant damage and the stoichiometric imbalance that remains after the post-implantation anneal. Although all high-dose implants exhibited severe carrier redistribution for the parameters studied, significant improvements in the peak hole concentration up to 8.0×1018 cm−3 were obtained by a combination of P+ co-implantation and RTA.

Highlights

A typical hybrid circuit is of such complexity that both a simplified structural model and some analysis assumptions are necessary for a tractable representation of both electrical and thermal effects
B) A given material is assumed homogeneous and isotropic; c) All resistors are of negligible thickness and dissipate power uniformly over their area; d) The power dissipation Pe of a semiconductor die such as that of Figure 1 is uniform over the top surface
Cm.; The bond thermal resistance REB has a dominant effect on the overall thermal characteristics, and would be lowest if a eutectic bond were used

Summary

INTRODUCTION

A typical hybrid circuit is of such complexity that both a simplified structural model and some analysis assumptions are necessary for a tractable representation of both electrical and thermal effects. Figure shows the structural model used here, for the case in which the power dissipating element is a semiconductor die of thickness te, with a bonding material of thickness tE attaching it to a substrate of thickness ts. The most significant assumptions are as follows (these are essentially those of Reference 1): a) Heat transfer is primarily by conduction #; radiation and convection are neglected; L. C.R. ZIMMER b) A given material is assumed homogeneous and isotropic (constant thermal conductivity); c) All resistors are of negligible thickness and dissipate power uniformly over their area; d) The power dissipation Pe of a semiconductor die such as that of Figure 1 is uniform over the top surface

STRUCTURAL THERMAL CHARACTERISTICS

Numerical Results

DEVICE THERMAL CHARACTERISTICS

COMPUTER MODEL

CONCLUSION