Electrical characterization of Zn + and P + co-implanted InP:Fe

Abstract

We investigated the effects of P + co-implantation, implantation temperature and type of post-implantation anneal on the hole concentration distributions in semi-insulating (100) InP:Fe wafers implanted with 5×10 13 and 5×10 14 cm −2 Zn + ions. At low doses the P + co-implant combined with a capless rapid thermal anneal (RTA) at 900°C for 10 s greatly suppresses Zn dopant indiffusion and results in peak hole concentrations of 3.0×10 18 to 3.5×10 18 cm −3. At high doses the peak hole concentration and general distribution are influenced by the residual implant damage and the stoichiometric imbalance that remains after the post-implantation anneal. Although all high-dose implants exhibited severe carrier redistribution for the parameters studied, significant improvements in the peak hole concentration up to 8.0×10 18 cm −3 were obtained by a combination of P + co-implantation and RTA.