Abstract
The electrical characteristics of wafer-bonded non-doped germanium-on-insulator (GOI) substrates were investigated using a four-point-probe pseudo-metal–oxide–semiconductor field-effect transistor. Annealing the wafer-bonded GOI substrates in vacuum strongly influenced their electrical characteristics. GOI samples annealed at temperatures below 500 °C exhibited n-channel depletion transistor operation, whereas GOI samples annealed at temperatures between 550 and 600 °C exhibited p-channel depletion transistor operation. The carrier mobility strongly depended on the sweep direction of the gate voltage; this characteristic disappeared after annealing at temperatures above 550 °C. The dependence of the electrical characteristics on the annealing temperature is explained in terms of the influence of the defect states on energy band bending near the interface.
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