Abstract
We report the first demonstration of ultrathin-body GeOI MOSFETs utilizing a surface region of Smart-Cut™ GeOI substrates with high material quality. The devices are realized by flipping the Smart-Cut™ GeOI substrates, directly bonding them to another Si substrate, removing the supporting Si substrate of the Smart-Cut™ GeOI and thinning the flipped GeOI films. The normal operation of pMOSFETs is confirmed for GeOI with thickness down to 11 nm. It is found that the hole mobility of the flipped GeOI is higher at a given GeOI thickness than that of the original GeOI. The peak effective hole mobility of 117 cm2/Vs, is obtained for 11-nm-thick-GeOI pMOSFETs.
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