Abstract
Applying the right tensile strain to suspended membranes [1] can make Germanium a direct band-gap semiconductor, which is most promising way to low-threshold lasing [2]. The current key to reach the targeted high tensile strain is the quality of the Germanium. Epitaxied Germanium (Ge) on Silicon (Si) suffers from dislocations at its interface due to the lattice mismatch between Si and Ge (Figure 1 a). Higher crystalline quality can be obtained by fabricating Germanium on Insulator (GeOI) substrates by Smart CutTM technology [3]. However, the processing has to be adapted to obtain specific “optical” GeOI substrates [4], much thicker than standard microelectronics GeOI.
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