Abstract
A thieno[3,4-b]thiophene and benzodithiophene copolymer PTB7, which has received much attention as a donor material of organic solar cells, is electrically characterized using a field-effect transistor (FET) configuration. The hole mobility of PTB7 FETs is ∼2.0 × 10−3 cm2·V−1·s−1, which is independent of annealing temperature, while the threshold voltage shifts towards a negative value with increasing annealing temperature. This is due to the increase in the density of deep trapping states with thermal annealing. The threshold voltage also shifts towards a negative value after aging, indicating that additional deep trapping states are generated in PTB7 thin films even at room temperature.
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