Abstract
Investigation of electrical characteristics of partially-depleted SOI (silicon-on-insulator) and bulk-Si n-MOSFET devices in order to compare their electrical characteristics using Silvaco software was done and presented in this paper. Two specific channel lengths of the device that had been concentrated are 0.5 and 0.35 micron. The comparisons were focused on three main electrical characteristics that are leakage current, threshold voltage and subthreshold voltage. The device structures were constructed using Silvaco-Athena and the characteristics were examined and simulated using Silvaco-Atlas. Results were analyzed and presented to show that the electrical characteristics of fully-depleted SOI devices are better than that of bulk-Si devices. It has also shown that the partially-depleted SOI device is superior in the submicron region.
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