Abstract
Investigation of electrical characteristics of fully depleted SOI (silicon-on-insulator) and bulk-Si n-MOSFET and p-MOSFET devices in order to compare their electrical characteristics using Sentaurus software was done and presented in this paper. Specific channel length of the device that had been concentrated is 17nm. The comparisons were focused on main electrical characteristics that are threshold voltage, ON current, OFF current, ON current and OFF current ratio, Drain induced barrier lowering(DIBL), Subthreshold slope. The device structures were constructed using Sentaurus-structure editor and the characteristics were examined and simulated using Sentaurus-Inspect. Results were analyzed and presented to show that the electrical characteristics of fully-depleted SOI devices are better than that of bulk-Si devices. It has also shown that the fully-depleted SOI device is superior in the submicron region.
Published Version
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