Abstract
Epitaxial SrTiO3/YBa2Cu3O7-x(STO/YBCO) multilayers were fabricated by an ozone-assisted Molecular Beam Epitaxy (MBE) method for a superconducting field-effect transistor(SuFET). STO films deposited at around 500 °C produced negligible inter diffusion with YBCO films, confirmed by an in-situ Auger Electron Spectroscopy (AES) analysis. A Ag(100nm)/STD(250nm)/YBCO(20nm) gate structure was deposited successively for SuFET evaluation and showed an improved modulation characteristics because of the suppression of interdiffusion between STD and YBCO films.
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