Abstract
Biepitaxial Josephson junctions and superconducting field effect transistors (SuFET) were fabricated in order to combine both techniques to a Josephson junction field effect transistor (JoFET). The Josephson junctions show RSJ-like behaviour. At 30 K a critical current density of J c ≃10 4 A/cm 2 and an I c R N -Product of 0.1 mV were obtained. The oscillation of Shapiro steps with applied microwave field can be well fitted by the RSJ-model. SuFETs with CeO 2 as dielectric show, for fixed charge transfer, results comparable to SrTiO 3 -based SuFETs. The downset of the resistive transition of a six-unit-cells thick YBa 2 Cu 3 O 7-δ layer is 44 K and the largest field effect obtained so far is 1.5%. Primary results on JoFETs show a drastic change in the critical current density and in the specific junction resistance, however the I c R N -product remains still in the typical range. The insulating properties are degraded compared to SuFETs
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