Abstract
Epitaxial SrTiO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7-x/ (STO/YBCO) multilayers for a superconducting field-effect transistor (SuFET) were fabricated by an ozone assisted Molecular Beam Epitaxy (MBE) method. To eliminate interdiffusion at the interface, we deposited high quality STO films at around 500/spl deg/C on YBCO films with clean surfaces. At this temperature, interdiffusion was negligible through in-situ Auger Electron Spectroscopy (AES). The electric field effect in a Ag/STO/YBCO device configuration also indicated the suppression of the interfacial layer between the STO and YBCO film.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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