Abstract
The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si(PTSS) and Pt/MgO(PM) substrates by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD). SrF2 phase existing in the STO films deposited on PM at 500°C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films on PTSS and PM at 500°C were 210, 0.02 and 140, 0.07 at 100 kHz, respectively. Leakage current densities of STO films deposited on PTSS and PM at 500°C were about 1.5 × 10−8 A/cm2 and 1.0 × 10−6 A/cm2 at 2 V, respectively. The leakage current behavior regardless of SrF2 phase in STO films was controlled by Schottky emission with applied electric field.
Published Version
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