Abstract
The deposition temperature dependence of Ba0.7Sr0.3TiO3 (BST) thin film physical and electrical properties was investigated. Films were deposited between 250 and 500°C by electron cyclotron resonance (ECR) plasmaenhanced liquid source metalorganic chemical vapor deposition (MOCVD). Depositions were carried out in an oxygen plasma using the precursors Ba(thd)2•(polyamine), Sr(thd)2•(polyamine), and Ti(O-i-Pr)2(thd)2. With a constant ECR plasma power, composition and growth rate were independent of temperature within the full range investigated, in contrast to most thermally-driven CVD BST processes. Films grown above 350°C were crystalline as-deposited on Pt, and were (100)-textured. The dielectric properties depended strongly upon BST crystallinity, with a sharp increase in dielectric constant and its field dependence observed above 350°C. For slightly Ti-rich, 800Å thick films, dielectric constants of 281 were obtained at 500°C, following a 550°C top electrode anneal in O2. Over the full deposition temperature range investigated, the leakage current density was less than 10-7 A/cm2 at 2.0 V and dielectric loss tangents varied between 0.003 and 0.013.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
