Effect of oxygen vacancies on nonlinear dielectric properties of SrTiO3 thin films

Abstract

Ferroelectrics (FE) are a class of nonlinear dielectrics which exhibit an electric field dependent dielectric constant. High temperature superconductors (HTSC) offer lower microwave surface resistance than conventional materials. There have been significant interest and effort in combining the low microwave losses of HTSC with the voltage control of FE dielectric constant er to implement high quality voltage tunable microwave devices, such as phase shifters, filters, delay lines, and tunable oscillators [1–4]. In such devices, it is desirable to have a large capacitance change ratio [tunability = (Cmax–Cmin)/Cmax] under a certain electric field range accompanied by a small dielectric loss. SrTiO3 (STO) thin films which posses a transition peak located at 60–70 K is one of the most interesting FE materials due to its high nonlinearity and reasonably low dielectric loss. A main focus on research for effective utilization of STO thin films is the development of materials with simultaneously optimized permittivity (absolute magnitude as well as its electric field dependence.) and low dielectric loss (tand). However, the tunability and dielectric loss in STO thin films have not been comparable to that of bulk materials. Comparing with STO single crystal, most STO thin films showed low dielectric constant, low tunability and large dielectric loss. Many reasons have been suggested to the degradation in dielectric properties of STO thin films. The tetragonal distortion (ratio of in-plane and surface normal lattice parameters, D = a/c), the dead layer near interface, and the local polar regions near charged defects like oxygen vacancies are expected to degrade the dielectric properties of STO thin films [5–7]. Several researchers have investigated the effect of oxygen vacancies on dielectric properties of heteroepitaxially grown STO thin films [8, 9]. It is worthwhile to note that the study of oxygen vacancies on dielectric properties of hetero-epitaxial STO thin films is complicated because of the additional effect of film stress due to film-substrate crystal lattice mismatch and difference in thermal expansion coefficients. There have been no systematic studies on the influence of oxygen vacancies on dielectric properties of STO thin films. In this study, STO thin films were homoepitaxially grown on Nb doped STO (Nb:STO) substrate. No additional stress is caused by lattice constant mismatch and thermal expansion coefficient differences between films and substrate in the homo-epitaxial STO thin films. The effect of oxygen vacancies on dielectric properties of STO thin films are presented. STO thin films were deposited on Nb:STO substrates by pulsed laser deposition (PLD). KrF excimer laser radiation (Lamda Physik Compex 201) with repetition rate of 5 Hz was focused on a rotating target set in the chamber through a quartz window. The incident angle of laser beam to the target surface was fixed to be 45 . The output laser pulse energy was kept as 150 mJ which yielded a growth rate of 0.02 nm per pulse. The laser energy density was about 2 J/cm. X. Z. Liu B. W. Tao (&) Y. R. Li The National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Jianshe Road, Chengdu 610054, China e-mail: bwtao@uestc.edu.cn