Abstract
The dielectric properties of SrTiO3 thin films deposited on SrRuO3 seed layer was investigated. The SrTiO3 thin films were deposited by plasma enhanced atomic layer deposition using titanium tetra-isopropoxide and bis(dipivaloylmethanato) strontium as precursors and oxygen as an oxidant. The SrRuO3 seed layer was formed through deposition of ultra-thin SrO on RuO2 substrate and a post-annealing in O2 ambient. As the results of introducing SrRuO3 seed layer, the dielectric constants of SrTiO3 thin films were increased and the thickness dependency of dielectric properties was reduced compared with the SrTiO3 thin films deposited on Ru directly or seed formed on Ru substrate.
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