Abstract
Effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800°C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples. In addition, capacitance-voltage characteristics of the investigated Al/Y2O3/Si-based metal-oxide-semiconductor capacitors were also presented in this work.
Highlights
EFFECTS OF POST-DEPOSITION ANNEALING TIME IN FORMING GAS AMBIENT ON Y2O3 FILMS DEPOSITED ON SILICON SUBSTRATE
800 ̊C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate
X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples
Summary
EFFECTS OF POST-DEPOSITION ANNEALING TIME IN FORMING GAS AMBIENT ON Y2O3 FILMS DEPOSITED ON SILICON SUBSTRATE Hock Jin Quah1,*, Kuan Yew Cheong2, Zainuriah Hassan1, Way Foong Lim1 1Institute of Nano Optoelectronics Research and Technology (INOR), Universiti
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
