Abstract
In this work, 5-nm thick yttrium oxide (Y2O3) thin films were deposited on n-type Si substrate using RF magnetron sputtering. The effects of different post-deposition annealing (PDA) times (15, 30, and 45 min) in nitrogen ambient on Y2O3 films were investigated. XRD characterization revealed the presence of Y2O3 and yttrium silicate (Y2Si2O7) phases for all of the investigated samples. In addition, metal-oxide-semiconductor characteristics of Y2O3 gate subjected to different PDA times were also investigated in this work. An enhancement in leakage current density-breakdown voltage characteristic of Y2O3/Si MOS test structure was observed as the PDA time was prolonged.
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