Deposition and post-deposition annealing of thin Y 2O 3 film on n-type Si in argon ambient

Abstract

Thin (∼5.0 nm) Y 2O 3 films were deposited on n-type Si (1 0 0) substrate using RF magnetron sputtering. Detailed studies on the effects of post-deposition annealing (PDA) temperatures (400, 600, 800, and 1000 °C) in argon ambient on these films were performed by X-ray diffraction (XRD), Fourier transform infrared spectrometer (FTIR), field emission scanning electron microscopy, and atomic force microscopy. Interfacial layer (IL) of SiO 2 in between Y 2O 3 and the Si substrate for sample annealed from 400 to 800 °C had been suggested from the results of FTIR. As for sample annealed at 1000 °C, presence of IL might consist of both Y 2Si 2O 7 and/or SiO 2 through the detection of Y 2Si 2O 7 compound and Si–O chemical bonding from XRD and FTIR analysis, respectively. For as-deposited sample, no detectable chemical functional group at the IL was recorded. Electrical characteristics of the Y 2O 3 films were acquired by fabricating metal-oxide–semiconductor capacitor as test structure. An improvement in the breakdown voltage ( V B) and leakage current density ( J) was perceived as the PDA temperature increased. Of the PDA samples, the attainment of the lowest effective oxide charge, interface trap density, total interface trap density, and the highest barrier height at 1000 °C had contributed to the acquisition of the highest V B and lowest J.