Abstract
In this study, we have employed e-beam evaporation technique to evaluate the effect of O2 flow rate during evaporation on HfO2 films grown on Silicon substrates. We report the influence of oxygen flow rate on 32-40nm HfO2 films, by characterizing the chemical and electrical properties. It has been demonstrated that the films deposited at 3 SCCM O2 flow rate show better compositional and electrical properties. The effect of post deposition annealing (PDA) and post metallization annealing (PMA) in forming gas ambient (FGA) has been analyzed on the electrical properties of the films. After annealing the leakage decreases drastically, with a slight deterioration in dielectric constant. O2 flow rate of 3 to 5 SCCM has been found to be the optimum condition.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
