Abstract
Bi 4Ti 3O 12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO 2/Si substrates by sol–gel method. The niobium-doped Bi 4Ti 3O 12 (Nb–BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2 P r) and coercive field (2 E c) of the Nb–BiTiO film annealed at 700 °C were 28 μC/cm 2 and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5×10 10 cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call