Effects of metal electrodes on the resistive memory switching property of NiO thin films

Abstract

The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p-type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.