Abstract
We fabricated non-volatile memories from metal-insulator-semiconductor structure to investigate the effects of different metal electrodes and dielectric thickness towards the electrical behaviour of the device. The insulator layer is a nanocomposite layer consists of embedded gold nanoparticles in polymethylsilsesquioxane. The AuNPs have an average size of 20nm. Gold and aluminium electrodes and different PMSSQ's thickness were used to examine their effects on the non-volatile memories (NVMs). NVMs with gold electrodes are reprogrammable and have a similar behaviour to a flash memory that can be erased and reprogrammed multiple times. However, NVMs made with aluminium electrodes are write-once-read-many. The transport mechanisms of the device have been described based on the I-V results.
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