Abstract
Magnetic tunnel junction (MTJ) is one of the cornerstones of modern information technologies. Bringing MTJ's operation beyond the conventional binary regime, enabled by tunneling magnetoresistance (TMR) effect, is highly promising for prospective memory technologies and neuromorphic hardware development. In this paper, we demonstrate multilevel magnetoresistance states in an all-perovskite-oxide La0.7Sr0.3MnO3 (LSMO)/BaTiO3/LSMO heterostructure grown on MgO substrates. Unlike traditional TMR, we observe four distinct regions of increased magnetoresistance, which result in three magnetic field-induced resistance states in total. We show that the observed phenomenon arises from the low-field magnetoresistance effect, which occurs in the two epitaxial LSMO layers, independently and at different values of the magnetic field. The effect is well simulated by a model based on the presence of structural defects and non-uniform deformations in the LSMO layers, induced by the large lattice mismatch of the LSMO with the MgO substrate. We believe that our findings contribute to the understanding of complex magnetoresistance effects in MTJs and can be taken into consideration for the design of multi-bit memory cells or neuromorphic devices.
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