Effects of fluorine ion implantation on metal-oxide-semiconductor devices of silicon-on-sapphire

Abstract

Effects of fluorine ion implantation on electrical characteristics of metal-oxide-semiconductor (MOS) devices on silicon-on-sapphire have been investigated. The fluorine implantation generates deep acceptor levels, the nature of which is significantly affected by the sequence of the implantation and gate oxidation in device fabrication process steps. It was found that drain leakage current of fluorine-implanted MOS transistors can be reduced to about 0.1 times compared with unimplanted devices without degrading the basic electrical characteristics.