Abstract
This study investigated the effects of the bottom electrode (BE) on the resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with gadolinium oxide and aluminum oxide (GdxOy/AlxOy) solid electrolytes (SEs). The RS mechanisms of memories with different bottom electrodes were proposed based on the temperature dependence of the resistance at low resistance state (LRS) and current–voltage (I–V) fitting at high resistance state (HRS). The Schottky emission was dominant in the resistive switching of the memory with an iridium bottom electrode (Ir-BE), whereas in the memories with n+-Si and nickel (Ni) bottom electrodes, silver and both silver and nickel ions dominated the resistive switching, respectively. Additionally, the Ag-PMC with Ni-BE had a high resistance ratio of more than 107 as a result of the extremely low resistance of roughly 50 Ω at LRS. The Ag-PMCs with GdxOy/AlxOy SEs and Ni-BE exhibited a retention behavior of more than 104 s and an endurance of more than 500 cycles with a resistance ratio of at least four orders of magnitude, which is promising for future high-density nonvolatile memory applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
