Abstract
This paper reports on the effects of annealing process on the dielectric properties of lead titanate (PbTiO3) thin films. The thin films have been deposited on silicon substrates using sol-gel spin coating method. The dielectric properties and resistivity of the thin films annealed at different annealing temperatures and times were then investigated using HIOKI 3532-50 LCR meter and four point probe respectively. It was found that the dielectric constant exhibits inverse relationship with dielectric loss and strongly affected by annealing time and temperature. Annealed at 700°C resulted in dielectric constant and loss of 44 and 0.1 respectively. The resistivity of the films was measured to be 1.34×104 Ωm.
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