Abstract
Lead Titanate (PbTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) thin films derived from metal alkoxide precursor solution through sol-gel method were deposited onto silicon substrates by dip coating. These films were deposited at different immersing times. The withdrawal speed on the other hand was fixed at 7 mm/s. The dielectric properties of these thin films were investigated as a function of frequency. The IV characteristics and micro-structural property were also examined. The thin films deposited at lowest immersing time resulted in higher dielectric constant and lower dielectric losses. The dielectric constant and dielectric loss for lead titanate thin films immerse time at 25 s were measured to be around 14 and 0.0051 respectively at 100 Hz.
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