Synthesis and characterization of lead strontium titanate thin films by sol–gel technique

Abstract

A series of strontium doped lead titanate (Pb x Sr 1− x TiO 3) thin films were deposited on platinized silicon substrates by sol–gel technique and were characterized for their phase purity, surface morphology, dielectric and leakage current characteristics. The grain size of lead titanate thin films was systematically reduced with the increase in strontium content. With the addition of 50 at.% strontium doping, at room temperature, cubic perovskite phase was stabilized in lead titanate thin film. The measured dielectric constant decreased with the increase of strontium content of Pb x Sr 1− x TiO 3 thin films. The leakage current densities of PT thin films were systematically reduced with the increase in strontium content. The high dielectric constant, low loss tangent and leakage current densities of cubic PST thin films could be attractive combinations for these films to be used in dynamic random access memories (DRAM).