Optimizing dielectric and electrical properties of graphene oxide thin film with temperature tuning: Insights from impedance spectra analysis on insulator to semiconductor transition

Abstract

The study focused on exploring the impact of annealing temperatures on dielectric and electrical, and conductivity properties of Graphene Oxide (GO) thin films. The investigation involved measuring impedance spectra across a temperature range spanning from room temperature (T=300 K) to high temperature (T=560 K). The findings revealed intriguing trends in the behavior of GO thin films under varying annealing temperatures. Firstly, it was observed that the dielectric constant of the GO thin film exhibited an upward trend with increasing temperature within the specified range. This indicates a temperature-dependent response in the dielectric properties of the material. Secondly, the electrical conductance of the film was found to be influenced by both frequency and annealing temperature. Specifically, the AC conductance showcased semiconductor behavior across a broad temperature spectrum, with a notable increase in conductance as the annealing temperature rose. This suggests a correlation between electrical properties and the annealing temperature of the GO thin film. Furthermore, the impedance analysis of the GO films revealed distinct relaxation processes at different temperatures, indicating varying dynamics within the material under thermal conditions. Additionally, the study highlighted a direct relationship between dielectric behavior and factors such as dielectric loss, polarization effects, and enhancements in the dielectric constant. These findings underscore the intricate interplay between thermal treatment, dielectric properties, and conductivity in GO thin films. Hence, the research elucidates the complex nature of GO thin films’ electrical, dielectric, and conductivity characteristics under annealing temperature variations, shedding light on potential applications and further avenues for exploration in this field.