Effect of texture on 4H–SiC substrate surface on film growth: A molecular dynamics study

Abstract

An investigation is conducted in this paper of the effect of different textured substrates on the growth of film. Meanwhile, a comparison of film quality with that of non-textured substrate is carried out. Results show that different textured substrates produce different dislocation morphologies, while the surface morphology is closely related to the substrate. There is less dislocation density and minimal surface roughness in the film with groove textured-[11‾00] substrate than in the film without the textured substrate. Interface mixing occurs in the deposition of film, resulting in an oscillatory behavior of the internal stress. The film with groove textured-[11‾00] substrate has a lower defect volume fraction and a higher film density than the film on non-textured substrate. Further, the groove textured-[11‾00] has a lower interface energy, which provides a good basis for the growth of the deposited film. The study of this work further reveals the role of different substrate patterns in regulating the crystal quality of 4H–SiC film, which provides guidance for the design of substrate patterns.