Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis

Abstract

This work explores the temperature associated reliability issues of selective buried oxide (SELBOX) TFET. The proposed device is optimized for maximum ION/IOFF ratio considering various gap positions in the buried oxide. The variation of DC parameters such as ID-VGS characteristics, subthreshold swing (SS) and ION/IOFF ratio for a wide range of temperature from 300 K to 500 K has been studied. The proposed SELBOX device is compared with conventional silicon-on-insulator device considering various RF parameters. Moreover, the dependency of RF performance of the proposed device on temperature has been examined. The variation of RF parameters such as transconductance (gm), cut-off frequency (fT), gate capacitance (CGG), intrinsic delay and transconductance frequency product (TFP) with temperature has also been studied. The linearity of the device has been explored by analyzing the influence of temperature variation on 1-dB compression point. Further, temperature dependency in the presence of quantum correction (QC) model has been analyzed.